MPS8050

MPS8050 MPS8050 C BE TO-92 NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 25 40 6.0 1.0 -55 to +150 NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max MPS8050 625 5.0 83.3 200 Units V V V A °C Units mW mW /°C °C/W °C/W  1997 Fairchild Semiconductor Corporation MPS8050 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector-Cutoff Curr...