DatasheetsPDF.com

MPSA26 Datasheet

Part Number MPSA26
Manufacturers NXP
Logo NXP
Description (MPSA26 / MPSA27) NPN Darlington transistors
Datasheet MPSA26 DatasheetMPSA26 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA26; MPSA27 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 27 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 10000). APPLICATIONS • High gain amplification. handbook, halfpage MPSA26; MPSA27 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 1 DESCRIPTION NPN Darlingt.

  MPSA26   MPSA26






Part Number MPSA26
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON NPN DARLINGTON TRANSISTORS
Datasheet MPSA26 DatasheetMPSA26 Datasheet (PDF)

MPSA26 MPSA27 SILICON NPN DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Juncti.

  MPSA26   MPSA26







Part Number MPSA26
Manufacturers Motorola
Logo Motorola
Description DARLINGTON TRANSISTOR
Datasheet MPSA26 DatasheetMPSA26 Datasheet (PDF)

MPSA25 MPSA26 MPSA27 CASE 29-02, STYLE 1 TO-92 (TO-226AA) DARLINGTON TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @ Ta = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol MPS-A25 MPS-A26 MPS-A27 Unit VCE$ 40 50 60 Vdc vEBO 10 Vdc 'C 500 mAdc PD 625 mW 5.0 mW/°C Tj. TSt g -55 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction.

  MPSA26   MPSA26







Part Number MPSA26
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description NPN Transistor
Datasheet MPSA26 DatasheetMPSA26 Datasheet (PDF)

.

  MPSA26   MPSA26







(MPSA26 / MPSA27) NPN Darlington transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA26; MPSA27 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 27 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 10000). APPLICATIONS • High gain amplification. handbook, halfpage MPSA26; MPSA27 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 1 DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. 1 2 3 TR1 TR2 MAM252 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO MPSA26 MPSA27 VCES collector-emitter voltage MPSA26 MPSA27 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 − − − − − − − −65 − −65 50 60 10 500 1 100 500 +150 150 +150 V V V mA A mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 50 60 V V MIN. MAX. UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN Darlington transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless othe.


2005-12-15 : TCO-9133    TCO-909Z    TCO-919A    TCO-919R    UZ7736    UZ7740    UZ7745    UZ7750    UZ7756    UZ7760   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)