MPSA27

SEMICONDUCTOR TECHNICAL DATA DARLINGTON TRANSISTOR FEATURES ᴌComplementary to MPSA77. MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCES VEBO IC PC Tj Storage Temperature Range Tstg RATING 60 60 10 500 625 150 -55ᴕ150 UNIT V V V mA mW ᴱ ᴱ L M C MPSA27 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage ICBO IEBO V(BR)CES V(BR)CBO hFE(1) * hFE(2) * VCE(sat) * Base-Emitter Voltage VBE * * Pulse Test : PWᴪ300ỌS, Duty Cycleᴪ2%. TEST CONDITION VCE=50V, IE=0 VEB=10V, IB=0 IC=100ỌA, IE=0 IC=100ỌA, IE=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA MIN. 60 60 10K 10K - TYP. - MAX. 100 100 1.5 2 UNIT nA nA V V V V 2002. 2. 20 Revision No : 1 1/2 DC CURRENT GAIN h FE MPSA27 1000k 300K 100K 30K 10K 3K 1K 1 h FE - IC VCE =5V 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 1K BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VBE(sat) , VCE(sa...