Asynchronous Magnetoresistive RAM
Freescale Semiconductor Data Sheet
Document Number: MR0A16A Rev. 2, 11/2007
64K x 16-Bit 3.3-V Asynchronous Magnetores...
Description
Freescale Semiconductor Data Sheet
Document Number: MR0A16A Rev. 2, 11/2007
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR0A16A
44-TSOP Case 924A-02
Introduction
The MR0A16A is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 65,536 words of 16 bits. The MR0A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins, allowing for significant system design flexibility without bus contention. Because the MR0A16A has separate byte-enable controls (LB and UB), individual bytes can be written and read.
MRAM is a nonvolatile memory technology that protects data in the event of power loss and does not require periodic refreshing. The MR0A16A is the ideal memory solution for applications that must permanently store and retrieve critical data quickly.
The MR0A16A is available in a 400-mil, 44-lead plastic small-outline TSOP type-II package with an industry-standard center power and ground SRAM pinout.
The MR0A16A is available in Commercial (0°C to 70°C), Industrial (-40°C to 85°C) and Extended (-40°C to 105°C) ambient temperature ranges.
Features
Single 3.3-V power supply
Commercial temperature range (0°C to 70°C), Industrial temperature range (-40°C to 85°C) and Extended temperature range (-40°C to 105°C)
Symmetrical high-speed read and write with fast access time (35 ns)
Flexible data bus control — 8 bit or 16 bit access
Equal address and chip-enable access times
Automatic data protection with low-volt...
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