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MR16R082CBN1

Samsung semiconductor

(MR16R0824(6/8/C/G)BN1) RAMBUS MODULE

SERIAL PRESENCE DETECT MR16R0824(6/8/C/G)BN1 RAMBUS MODULE RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks...


Samsung semiconductor

MR16R082CBN1

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Description
SERIAL PRESENCE DETECT MR16R0824(6/8/C/G)BN1 RAMBUS MODULE RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version. -1- Version 1.1 Oct. 2000 SERIAL PRESENCE DETECT MR16R0824(6/8)BN1-CK8/CK7/CG6 Feature : Single Sided Module & 1,250 mil height Composition : 8Mx16 *4(6/8)pcs Used component type & part number 1 Normal Package (K4R271669B-NCK8/NCK7/NCG6) # of banks in component : 32s banks (Doubled with Split Banks) Refresh : 16K/32ms Contents ; Byte # (Dec) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Described Function SPD Revision Level Total Number of Bytes in the SPD Device Type Module Type Row Address Bits[3:0], Column Address Bits[3:0] Bank Address Bits and Type Refresh Bank Bits Refresh Period(=tREF) Protocol Version Misc. Device Configuration Field Minimum Precharge to RAS time(=tRP-R,Min ) Minimum RAS to Precharge time(=tRAS-R,Min) Minimum RAS to CAS time(=tRCD-R,Min) Minimum RAS to RAS time(=tRR-R,Min) Minimum Precharge to Precharge time(=tPP-R,Min) Min tCYCLE for Range A Max tCYCLE for Range A tCDLY Range for Range A tCLS and tCAS Range for Range A Min tCYCLE for Range B Max tCYCLE for Range B tCDLY Range for Range B tCLS and tCAS Range for Range B Min tCYCLE for Range C Max tCYCLE for Range C tCDLY Range for Range C tCLS and tCAS Range for Range C Mi...




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