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MR18R326GAG0 Datasheet

Part Number MR18R326GAG0
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description (32Mx18) 16pcs RIMM Module based on 576Mb A-die
Datasheet MR18R326GAG0 DatasheetMR18R326GAG0 Datasheet (PDF)

MR18R326GAG0 Change History Version 1.0 (Mar. 2004) * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Page 0 Version 1.0 Mar. 2004 MR18R326GAG0 (32Mx18)*16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V Overview The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where high bandwidth.

  MR18R326GAG0   MR18R326GAG0






(32Mx18) 16pcs RIMM Module based on 576Mb A-die

MR18R326GAG0 Change History Version 1.0 (Mar. 2004) * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Page 0 Version 1.0 Mar. 2004 MR18R326GAG0 (32Mx18)*16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V Overview The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 576Mb RDRAM devices. These are extremely high-speed CMOS DRAMs organized as 32M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32-bank architecture supports up to four simultaneous transactions per device. Key Timing Parameters/Part Numbers The following table lists the frequency and latency bins available for RIMM modules. Table 1: Part Number by Freq. & Latency Speed Organization Bin tRAC I/O (Row Freq. Access (MHz) Time) ns 1066 800 32P 40 Part Numb.


2006-01-19 : 74HC02AP    D75116GF    CL-GD7543    CL-GD7541    CL-GD7548    CL-GD7556    SB404L    SB4040PT    SB4020PT    SB4030PT   


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