MR2002C

MR2002C LDMOS TRANSISTOR Document Number: MR2002C Preliminary Datasheet V1.1 20W, 28V High Power RF LDMOS FETs Description The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. It can be used MR2002C in Class AB/B and Class C for all typical modulation formats. It can also operate at lower voltage down to 12V with decreased power capability.  Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA, CW. Frequency Gp (dB) P-1dB (W) 1000 MHz 22 20 D@P-1 (%) 65 Notice: It is recommended to operate this device only below 24V like 14V,12V etc, if operation band is below 500MHz. Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Suitable Application...