MRA051050H

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRA0510–50H/D The RF Line UHF Power Transistor Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. Designed for Class AB Linear Power Amplifiers Specified 28 Volt, 1000 MHz Characteristics: Output Power — 50 Watts Power Gain — 7 dB (Min), Class AB Built–In Matching Network for Broadband Operation Gold Metallization for Improved Reliability Diffused Ballast Resistors Hermetic Package for Military/Space Applications MRA0510-50H 7.0 dB, 500 – 1000 MHz 50 W BROADBAND UHF POWER TRANSISTOR CASE 391–03, STYLE 1 (HLP–42) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Value 30 60 4 125 0.715 200 – 65 to +200 Unit Vdc Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, RF, Junction to Case (TC = 70°C) Symbol RθJC Max 1.4 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0) Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) Collector–Emitter Breakdown Voltage (IC = 25 mA, RBE = 1 Ω) Collector Cutoff Current (VCB = 30 V, IE = 0) (1) Each transistor chip measured ...