MRA100014L

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRA1000–14L/D The RF Line UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics: Output Power — 14 Watts Power Gain — 8.0 dB, Small–Signal Built–In Matching Network for Broadband Operation Gold Metallization for Improved Reliability Diffused Ballast Resistors Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRA1000-14L 8.0 dB, TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR CASE 145D–02, STYLE 1 (.380 SOE) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Value 28 50 3.5 83 0.48 200 – 65 to +150 Unit Vdc Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (TC = 70°C) Symbol RθJC Max 2.1 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mA, IB = 0) Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0) Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mA, IC = 0) Collector Cutoff Current (VCB = 19 V, IE = 0) V(BR)CEO ...