MRA100035L

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRA1000–3.5L/D The RF Line UHF Power Transistor Designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics: Output Power — 3.5 Watts Power Gain — 10 dB, Small–Signal Built–In Matching Network for Broadband Operation Gold Metallization for Improved Reliability Diffused Ballast Resistors MRA1000-3.5L 10 dB, 1000 MHz 3.5 W BROADBAND UHF POWER TRANSISTOR CASE 145D–02, STYLE 1 (.380 SOE) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Value 28 50 3.5 22 0.125 200 – 65 to +200 Unit Vdc Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (TC = 70°C) Symbol RθJC Max 8 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) . V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 28 50 50 3.5 – – – – – – – – – – 10 Vdc Vdc Vdc Vdc mAdc (continued) REV 1 RF DEV...