MRA1417-6H

MRA1417-6H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links. FEATURES INCLUDE: Gold Metallization Emitter Ballasting Input Matching MAXIMUM RATINGS IC 1.0 A VCBO PDISS TJ TSTG θJC 50 V 19 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC 9.0 OC/W PACKAGE STYLE .250 2L FLG (B) 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCBO BVCES BVEBO IC = 25 mA IC = 25 mA IE = 3.0 mA hFE VCE = 5.0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 50 55 3.5 20 100 Cob VCB = 28 V f = 1.0 MHz 6.5 PG ηC VCE = 28 V POUT = 6.0 W f = 1400 - 1700 MHz 7.2 7.5 40 UNITS V V V --- pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...