NPN SILICON RF POWER TRANSISTOR
MRAL2023-18
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRAL2023-18 is a Common Base Device Designed for www.D...
Description
MRAL2023-18
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRAL2023-18 is a Common Base Device Designed for www.DataSheet4U.com Class C Amplifier Applications in LBand FM Microwave Links.
PACKAGE STYLE .250 2L FLG (C)
FEATURES INCLUDE:
Gold Metalization Emitter Ballasting Input/Output Matching
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 4.0 A 42 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W
A B C D E F G H I J K L
MINIMUM Inches/mm .095/2.41 0125/3.18 .380/9.65 .780/19.81 .392/9.96 .645/16.38 .895/22.73 .002/0.05 .055/1.40 .105/2.67 .392/.408
MAXIMUM Inches/mm .105/2.67 .390/9.91 .408/10.36 .655/16.64 .905/22.99 .006/0.15 .065/1.65 .130/3.30 .230/5.84 .408/10.36
CHARACTERISTICS
SYMBOL
BVCES BVEBO ICBO hFE PG ηC
TC = 25 °C
TEST CONDITIONS
IC = 160 mA IE = 2.0 mA VCB = 22 V VCE = 5.0 V VCE = 22 V IC = 800 mA f = 2000 - 2300 MHz POUT = 18.0 W
MINIMUM TYPICAL MAXIMUM
42 3.5 4.0 10 7.0 35 100
UNITS
V V mA --dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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