MRF1000MB

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1000MB/D The RF Line Microwave Pulse Power Transistors Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Standard Package Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal Input Matching for Broadband Operation MRF1000MB 0.7 W, 960–1215 MHz CLASS A/AB MICROWAVE POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 20 50 3.5 200 7.0 40 –65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C CASE 332A–03, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 25 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) ...