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MRF1004MB Datasheet

Part Number MRF1004MB
Manufacturers Tyco
Logo Tyco
Description MICROWAVE POWER TRANSISTORS
Datasheet MRF1004MB DatasheetMRF1004MB Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1004MB/D The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Lif.

  MRF1004MB   MRF1004MB






Part Number MRF1004MA
Manufacturers ASI
Logo ASI
Description NPN SILICON RF POWER TRANSISTOR
Datasheet MRF1004MB DatasheetMRF1004MA Datasheet (PDF)

MRF1004MA NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. PACKAGE STYLE .280 4L STUD FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 250 mA 20 V 7.0 W @ TC = 25°C -65 C to +200 °C -65 C to +150 °C 25.0 C/W O 1 = Collector 2 = Emitter 3 & 4 = Base CHARACTERISTICS SYMBOL BVCBO BVCEO BVE.

  MRF1004MB   MRF1004MB







MICROWAVE POWER TRANSISTORS

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1004MB/D The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation MRF1004MB 4.0 W, 960–1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332A–03, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 20 50 3.5 250 7.0 40 –65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 25 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 35 .


2005-08-21 : PM10RSH120    PM10RSH120    PM10RHB120    AN83C196    N83C198    MRF1015Mx    MRF1090Mx    MRF1090MB    MRF10502    MRF10501   


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