SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10120/D
The RF Line
Microwave Long Pulse Power Transistor
Desi...
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10120/D
The RF Line
Microwave Long Pulse Power Transistor
Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR Hermetically Sealed Industry Standard Package Silicon Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal Input and Output Matching for Broadband Operation
MRF10120
120 W (PEAK), 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON
CASE 355C–02, STYLE 1
MAXIMUM RATINGS
Rating Collector–Emitter
Voltage Collector–Base
Voltage Emitter–Base
Voltage Collector Current — Peak (1) Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 55 55 3.5 15 380 2.17 –65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.46 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown
Voltage (IC = 60 mAdc, VBE = 0) Collector–Base Breakdown
Voltage (IC = 60 mAdc, IE = 0) Emitter–Base Breakdown
Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Curr...