MRF1031

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1031/D UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics: Output Power — 4.5 Watts Power Gain — 7.0 dB Min, Class AB Gold Metallization for Improved Reliability MRF1031 4.5 W, TO 1.0 GHz LINEAR UHF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Value 30 60 4.0 50 0.286 200 – 65 to +150 Unit Vdc Vdc Vdc Watts W/°C °C °C CASE 244–04, STYLE 1 (.280 SOE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (TC = 70°C) Symbol RθJC Max 3.5 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mA, IC = 0) Collector Cutoff Current (VCB = 25 V, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 30 60 60 4.0 — — — — — — — — — — 2.5 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mA, VCE = 5.0 V) hFE 20 — 80 — DYNAMIC CHARACTERISTICS Output...