MRF1090MB

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1090MB/D The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Standard Package Nitride Passivated Gold Metallized for Long Life and Resistance to Metal Migration Internal Input Matching for Broadband Operation MRF1090MB 90 W PEAK, 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 332A–03, STYLE 1 MAXIMUM RATINGS Rating Collector–Base Voltage Emitter–Base Voltage Collector–Current — Peak (1) Total Device Dissipation @ TC = 25°C (1) (2) Derate above 25°C Storage Temperature Range Symbol VCBO VEBO IC PD Tstg Value 70 4.0 6.0 290 1.66 –65 to +150 Unit Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 70 70 4.0 — — — — — — — — 5.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (...