MRF136Y

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136/D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. Guaranteed 28 Volt, 150 MHz Performance MRF136 MRF136Y Output Power = 15 Watts Output Power = 30 Watts Narrowband Gain = 16 dB (Typ) Broadband Gain = 14 dB (Typ) Efficiency = 60% (Typical) Efficiency = 54% (Typical) Small–Signal and Large–Signal Characterization 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR Space Saving Package For Push–Pull Circuit Applications — MRF136Y Excellent Thermal Stability, Ideally Suited For Class A Operation Facilitates Manual Gain Control, ALC and Modulation Techniques G S MRF136Y D MRF136 MRF136Y 15 W, 30 W, to 400 MHz N–CHANNEL MOS BROADBAND RF POWER FETs MRF136 D CASE 211–07, STYLE 2 MRF136 G G S (FLANGE) CASE 319B–02, STYLE 1 MRF136Y D MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ 2.5 55 0.314 Value MRF136 65 65 ± 40 5.0 100 0.571 MRF136Y 65 65 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C – 65 to +150 200 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ...