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MRF141 Datasheet

Part Number MRF141
Manufacturers Motorola
Logo Motorola
Description N-CHANNEL BROADBAND RF POWER MOSFET
Datasheet MRF141 DatasheetMRF141 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 30 MHz, 28 V: Output Power — 150 W Gain — 18 dB (2.

  MRF141   MRF141






Part Number MRF141
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description RF FIELD-EFFECT POWER TRANSISTOR
Datasheet MRF141 DatasheetMRF141 Datasheet (PDF)

www.DataSheet4U.com MRF141 RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L S D Ø.125 NOM. C B G E D G S F K MAXIMUM RATINGS ID VDSS VGS PDISS TJ TSTG θJC 16 A 65 V ±40 V 300 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 0.6 °C/W DIM A B C D E F G H I J K L H I J MINIMUM inches / mm MAXIMUM inches / .

  MRF141   MRF141







Part Number MRF141
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description N-CHANNEL BROADBAND RF POWER MOSFET
Datasheet MRF141 DatasheetMRF141 Datasheet (PDF)

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF141/D The RF MOSFET Line RF Powe r Field-E ffec t Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 30 MHz, 28 V: Output Power — 150 W Gain — 18 dB (22 dB T.

  MRF141   MRF141







N-CHANNEL BROADBAND RF POWER MOSFET

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 30 MHz, 28 V: Output Power — 150 W Gain — 18 dB (22 dB Typ) Efficiency — 40% • Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB • Low Thermal Resistance • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability D MRF141 150 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET G S CASE 211–11, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 ± 40 16 300 1.71 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. www.DataSheet4U.com REV 8 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 M.


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