( DataSheet : www.DataSheet4U.com )
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF151/D
The RF MOSFET Line
...
( DataSheet : www.DataSheet4U.com )
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF151/D
The RF
MOSFET Line
RF Powe r Field-E ffec t Transistor
N–Channel Enhancement–Mode
MOSFET
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Guaranteed Performance at 30 MHz, 50 V: Output Power — 150 W Gain — 18 dB (22 dB Typ) Efficiency — 40% Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB Low Thermal Resistance Ruggedness Tested at Rated Output Power Nitride Passivated Die for Enhanced Reliability
D
MRF151
150 W, 50 V, 175 MHz N–CHANNEL BROADBAND RF POWER
MOSFET
G CASE 211–11, STYLE 2 S
MAXIMUM RATINGS
Rating Drain–Source
Voltage Drain–Gate
Voltage Gate–Source
Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ± 40 16 300 1.71 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
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ELECTRICAL C...