MRF1517NT1

Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment. D Specified Performance @ 520 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 11 dB Efficiency — 55% Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive Features Characterized with Series Equivalent Large - Signal G Impedance Parameters Excellent Thermal Stability Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request N Suffix Indicates Lead - Free Terminations. RoHS Compliant. Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1517NT1 520 MHz, 8 W, 7.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating www.DataSheet4U.com Symbol VDSS VGS ID Value - 0.5, +25 ± 20 4 62.5 0.50 - 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C Drain - Source Voltage Gate - Source Voltage (1) Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature (2) PD Tstg TJ Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol...