MOSFET. MRF1517T1 Datasheet

MRF1517T1 Datasheet PDF


Part MRF1517T1
Description RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by .
Manufacture Motorola
Datasheet
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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF1517T1 Datasheet




MRF1517T1
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1517/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1517T1 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
D
Characterized with Series Equivalent Large–Signal
Impedance Parameters
Excellent Thermal Stability
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
G
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
RF Power Plastic Surface Mount Package
S
Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MRF1517T1
520 MHz, 8 W, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage (1)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C (2)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Not designed for 12.5 volt applications.
(2)
Calculated
based
on
the
formula
PD
=
TJ TC
RθJC
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
25
± 20
4
62.5
0.50
– 65 to +150
150
Max
2
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
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MRF1517T1
1



MRF1517T1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 120 µAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
IDSS
IGSS
1 µAdc
1 µAdc
VGS(th)
1.0
1.7
2.1 Vdc
VDS(on)
0.5
— Vdc
gfs 0.9 — — S
Ciss — 66 — pF
Coss — 38 — pF
Crss
6
— pF
Gps 10 11 — dB
η 50 55 — %
MRF1517T1
2
MOTOROLA RF DEVICE DATA






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