MRF151G

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Guaranteed Performance at 175 MHz, 50 V: Output Power — 300 W Gain — 14 dB (16 dB Typ) Efficiency — 50% 300 W, 50 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Low Thermal Resistance — 0.35°C/W Ruggedness Tested at Rated Output Power Nitride Passivated Die for Enhanced Reliability S–Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ D G G S (FLANGE) CASE 375–04, STYLE 2 D MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ±40 40 500 2.85 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.35 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devi...