( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1535T1/D
The RF ...
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1535T1/D
The RF
MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. Specified Performance @ 520 MHz, 12.5 Volts Output Power — 35 Watts Power Gain — 10.0 dB Efficiency — 50% Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Broadband–Full Power Across the Band: 135–175 MHz 400–470 MHz 450–520 MHz Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
N–Channel Enhancement–Mode Lateral
MOSFETs
MRF1535T1 MRF1535FT1
520 MHz, 35 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER
MOSFETs
CASE 1264–09, STYLE 1 TO–272 PLASTIC MRF1535T1
CASE 1264A–02, STYLE 1 TO–272 STRAIGHT LEAD PLASTIC MRF1535FT1
MAXIMUM RATINGS
Rating Drain–Source
Voltage Gate–Source
Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 40 ±20 6 135 0.50 –65 to +150 175 Unit Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERIST...