( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF154/D
The RF MOS...
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF154/D
The RF
MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode
MOSFET
Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ)
600 W, 50 V, 80 MHz N–CHANNEL BROADBAND RF POWER
MOSFET
D
G S
CASE 368–03, STYLE 2 (HOG PAC)
MAXIMUM RATINGS
Rating Drain–Source
Voltage Drain–Gate
Voltage Gate–Source
Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ±40 60 1350 7.7 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.13 Unit °C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
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REV 2
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MOTOROLA RF DEVICE DATA
MRF154 1
PRODUCT TRANSFERRED TO M/A–COM
MRF154
ARCHIVE INFORMATION
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown
Voltage (VGS = 0, ID = 100 mA) Zero Gate
Voltage Drain Curren...