MRF1570FT1

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1570T1/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. Specified Performance @ 470 MHz, 12.5 Volts Output Power — 70 Watts Power Gain — 10 dB Efficiency — 50% Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Broadband–Full Power Across the Band: 135–175 MHz 400–470 MHz Broadband Demonstration Amplifier Information Available Upon Request Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1570T1 MRF1570FT1 470 MHz, 70 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1366–03, STYLE 1 TO–272 SPLIT LEAD PLASTIC MRF1570T1 CASE 1366A–02, STYLE 1 TO–272 STRAIGHT LEAD PLASTIC MRF1570FT1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 40 ± 20 165 0.5 – 65 to +150 175 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body ...