MRF175GU

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175GU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Guaranteed Performance MRF175GV @ 28 V, 225 MHz (“V” Suffix) Output Power — 200 Watts Power Gain — 14 dB Typ Efficiency — 65% Typ MRF175GU @ 28 V, 400 MHz (“U” Suffix) Output Power — 150 Watts Power Gain — 12 dB Typ Efficiency — 55% Typ 100% Ruggedness Tested At Rated Output Power Low Thermal Resistance Low Crss — 20 pF Typ @ VDS = 28 V G G S (FLANGE) MRF175GU MRF175GV 200/150 WATTS, 28 V, 500 MHz N–CHANNEL MOS BROADBAND RF POWER FETs D CASE 375–04, STYLE 2 D MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 65 65 ±40 26 400 2.27 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 0.44 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakd...