MRF18060B

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1930 – 1990 MHz. GSM Performance, Full Frequency Band (1930 – 1990 MHz) Power Gain — 13 dB (Typ) @ 60 Watts (CW) Efficiency — 45% (Typ) @ 60 Watts (CW) Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection: Class 2 Human Body Model, Class M3 Machine Model Ease of Design for Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts (CW) Output Power Excellent Thermal Stability MRF18060B MRF18060BS 60 W, 1.90 – 1.99 GHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 465–04, STYLE 1 (MRF18060B) CASE 465A–04, STYLE 1 (MRF18060BS) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC > = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VDSS VGS PD Tstg TJ Symbol RθJC Value 65 +15, –0.5 180 1.03 – 65 to +150 200 Max 0.97 Unit Vdc Vdc Watts W/°C °C °C Unit °C/W NOTE – CAUTION – MOS devices are susce...