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MRF19125 Datasheet

Part Number MRF19125
Manufacturers Motorola
Logo Motorola
Description RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
Datasheet MRF19125 DatasheetMRF19125 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub–Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2–Carrier N–CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS–95 CDMA (Pilot, Sync, Paging, .

  MRF19125   MRF19125






Part Number MRF19125SR3
Manufacturers Motorola
Logo Motorola
Description RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
Datasheet MRF19125 DatasheetMRF19125SR3 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub–Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2–Carrier N–CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS–95 CDMA (Pilot, Sync, Paging, .

  MRF19125   MRF19125







Part Number MRF19125S
Manufacturers Motorola
Logo Motorola
Description RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
Datasheet MRF19125 DatasheetMRF19125S Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub–Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2–Carrier N–CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS–95 CDMA (Pilot, Sync, Paging, .

  MRF19125   MRF19125







Part Number MRF19125R3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF19125 DatasheetMRF19125R3 Datasheet (PDF)

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF19125 Rev. 6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Cod.

  MRF19125   MRF19125







Part Number MRF19120S
Manufacturers Motorola
Logo Motorola
Description RF POWER FIELD EFFECT TRANSISTORS
Datasheet MRF19125 DatasheetMRF19120S Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub–Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs MRF19120 MRF19120S 1990 MHz, 120 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applicat.

  MRF19125   MRF19125







RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub–Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2–Carrier N–CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 24 Watts Avg. Power Gain — 13.6 dB Efficiency — 22% ACPR — –51 dB IM3 — –37.0 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19125 MRF19125S MRF19125SR3 1990 MHz, 125 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B–03, STYLE 1 (NI–880) (MRF19125) CASE 465C–02, STYLE 1 (NI–880S) (MRF19125.


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