MRF19125R3

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF19125 Rev. 6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 24 Watts Avg. Power Gain — 13.6 dB Efficiency — 22% ACPR — - 51 dB IM3 — - 37.0 dBc Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW Output Power Features Internally Matched for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19125R3 MRF19125SR3 1930- 1990 MHz, 125 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF191225R3 CASE 465C - 02, STYLE 1 NI - 880S MRF19125S...