MRF1K50GN Datasheet





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MRF1K50GN Datasheet - RF Power LDMOS Transistors

MRF1K50GN   MRF1K50GN  

Datasheet: MRF1K50GN datasheet

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Description: NXP Semiconductors Technical Data RF Po wer LDMOS Transistors High Ruggedness N --Channel Enhancement--Mode Lateral MOS FETs These high ruggedness devices are designed for use in high VSWR industri al, scientific and medical applications , as well as radio and VHF TV broadcast , sub--GHz aerospace and mobile radio a pplications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typica l Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 87.5--108 (1,2) 230 (3,4) CW Pulse (100 μsec, 20% Duty Cycle) 142 1 CW 1500 Peak 23.1 23.4 83.2 75.1 L oad Mismatch/Ruggedness Frequency (MH z) Signal Type VSWR Pin Test (W)


Manufacture Part Number Description

NXP

MRF1K50GN

RF Power LDMOS Transistors




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