MRF1K50GN Datasheet

[Recommendation Datasheet]

MRF1K50GN Datasheet - RF Power LDMOS Transistors


Datasheet: MRF1K50GN datasheet

Search Keywords: MRF1K50GN, datasheet, pdf, NXP, RF, Power, LDMOS, Transistors, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

Description: NXP Semiconductors Technical Data RF Po wer LDMOS Transistors High Ruggedness N --Channel Enhancement--Mode Lateral MOS FETs These high ruggedness devices are designed for use in high VSWR industri al, scientific and medical applications , as well as radio and VHF TV broadcast , sub--GHz aerospace and mobile radio a pplications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typica l Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 87.5--108 (1,2) 230 (3,4) CW Pulse (100 μsec, 20% Duty Cycle) 142 1 CW 1500 Peak 23.1 23.4 83.2 75.1 L oad Mismatch/Ruggedness Frequency (MH z) Signal Type VSWR Pin Test (W)

Manufacture Part Number Description



RF Power LDMOS Transistors

Alternate Search Terms:
MRF1K50GN datasheet MRF1K50GN component MRF1K50GN integrated circuit MRF1K50GN schematic MRF1K50GN application note RF1K50GN F1K50GN 1K50GN MRF1K50G MRF1K50 MRF1K5

@ 2014 :: ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)