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MRF20060RS Datasheet

Part Number MRF20060RS
Manufacturers Motorola
Logo Motorola
Description RF POWER BIPOLAR TRANSISTOR
Datasheet MRF20060RS DatasheetMRF20060RS Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large–signal, common emitter class AB amplifier applications. These devices are suitable for frequency.

  MRF20060RS   MRF20060RS






Part Number MRF20060R
Manufacturers Motorola
Logo Motorola
Description RF POWER BIPOLAR TRANSISTOR
Datasheet MRF20060RS DatasheetMRF20060R Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large–signal, common emitter class AB amplifier applications. These devices are suitable for frequency.

  MRF20060RS   MRF20060RS







RF POWER BIPOLAR TRANSISTOR

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large–signal, common emitter class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers. • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 9 dB Efficiency — 33% Intermodulation Distortion — –30 dBc • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP) Output Power • Designed for FM, TDMA, CDMA and Multi–Carrier Applications • Test Fixtures Available at: http://mot–sps.com/rf/designtds/ Note: Not suitable for class A operation. MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR ARCHIVE INFORMATION CASE 451–06, STYLE 1 (MRF20060R) DataShee DataSheet4U.com CASE 451A–03, STYLE 1 (MRF20060RS) MAXIMUM RATINGS Rating Collector–Emitter Voltage (IB = 0 mA) Collector–Emitter Voltage Collector–Base Voltage Collector–Emitter Voltage (RBE = 100 Ohm) Base–Emitter Voltag.


2006-09-07 : D2498    CX0200    CX0400    CX0500    CX0600    CX0700    CX0800    CX0900    CD9012    2SB1318   


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