MRF21125R3

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2 1600 mA, Carrier W - CDMA f1 = 2112.5 MHz, fP2e=rf2o1rm22a.n5cMe Hfozr,VCDhDa=nn2e8l bVaonltds,wIiDdQth== 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF. Output Power — 20 Watts Efficiency — 18% Gain — 13 dB IM3 — - 43 dBc ACPR — - 45 dBc Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power Features Internally Matched for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection ...