MRF225

MRF225 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T"c = 25°C(1) Derate above 25°C vCEO VCBO vEBO 'C PD 18 36 4.0 0.25 3.5 0.02 Vdc Vdc Vdc Adc Watts mW/°C Storage Temperature Tstg - 65 to + 200 °C (1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as Class C RF amplifiers. CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON 4U fr ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 20 mAdc, \q = 0) Collector-Emitter Breakdown Voltage dC = 20 mAdc, VBE - 0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, lc = 0) Collector Cutoff Current (Vcb = 15 Vdc, Ie = 0) ON CHARACTERISTICS DC Current Gain dC = 100 mAdc, Vce = 5.0 Vdc) SMALL SIGNAL CHARACTERISTICS Output Ca...