ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Cha...
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral
MOSFETs
Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. Specified Two--Tone Performance @ 1930 MHz, 26 Volts
Output Power — 4 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — --29 dBc Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power Features Excellent Thermal Stability Characterized with Series Equivalent Large--Signal Impedance Parameters S--Parameter Characterization at High Bias Levels RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Document Number: MRF281 Rev. 6, 10/2008
MRF281SR1 MRF281ZR1
1930--1990 MHz, 4 W, 26 V LATERAL N--CHANNEL BROADBAND...
