DatasheetsPDF.com

MRF282ZR1 Datasheet

Part Number MRF282ZR1
Manufacturers NXP
Logo NXP
Description RF Power Field Effect Transistors
Datasheet MRF282ZR1 DatasheetMRF282ZR1 Datasheet (PDF)

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.5 dB Efficiency — 28% Int.

  MRF282ZR1   MRF282ZR1






RF Power Field Effect Transistors

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.5 dB Efficiency — 28% Intermodulation Distortion — --31 dBc • Specified Single--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts CW Power Gain — 9.5 dB Efficiency — 35% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • RoHS Compliant • Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rati.


2019-01-03 : IRF623FI    IRF622FI    IRF621FI    IRF623    IRF622    IRF621    IRF543FI    IRF542FI    IRF541FI    IRF543   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)