SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF3104/D
The RF Line
Microwave Linear Power Transistors
• Design...
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF3104/D
The RF Line
Microwave Linear Power Transistors
Designed for Class A, Common Emitter Linear Power
Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics:
MRF3104 Output Power Power Gain 0.5 W 10.5 dB MRF3105 0.8 W 9 dB MRF3106 1.6 W 8 dB
MRF3104 MRF3105 MRF3106
8.0–12 dB GAIN 1.55–1.65 GHz MICROWAVE LINEAR POWER TRANSISTORS
Low Parasitic Microwave Stripline Package Gold Metalization for Improved Reliability Diffused Ballast Resistors
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector–Emitter
Voltage Collector–Emitter
Voltage Emitter–Base
Voltage Collector Current MRF3104, MRF3105 MRF3106 Symbol VCEO VCES VEBO IC Tj Tstg Value 22 50 3.5 0.4 0.8 200 –65 to +125 Unit Vdc Vdc Vdc Adc °C °C CASE 305A–01, STYLE 1 (.204″ PILL)
Operating Junction Temperature Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case, DC MRF3104 MRF3105 MRF3106 Symbol RθJC (DC) Max 40 35 22 Unit °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown
Voltage (IC = 10 mA, IB = 0) Collector–Emitter Breakdown
Voltage (IC = 10 mA, VBE = 0) Collector–Base Breakdown
Voltage (IC = 1 mA, IE = 0) Emitter–Base Breakdown
Voltage (IE = 0.25 mA, IC = 0) Collector Cutoff Current (VCB = 28 V, IE = 0) MRF3104, MRF3105 MRF3106 BVCEO BVCES BVCBO BVEBO ICBO 22 50 45 3.5 — — — — — — — — — — — — 0.25 0.5 Vdc Vdc Vdc Vdc mAdc
O...