MRF313

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF313/D The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficiency = 45% Typ Emitter Ballast and Low Current Density for Improved MTBF Common Emitter for Improved Stability MRF313 1.0 W, 400 MHz HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 305A–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 30 40 3.0 150 6.1 35 –65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 28.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, IB = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICEO 30 35 35 3.0 — — — — — — — — — — 1.0 Vdc Vdc Vdc Vdc mAdc (continued) 1 ELECTRICAL CHARACTERISTICS — c...