MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuo...
MAXIMUM RATINGS
Rating Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage
—Collector Current Continuous
@Total Device Dissipation Tq = 25°C
Derate above 25°C Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol v CEO VCBO v EBO
ic
PD
Tstg
Value 30 40 3.0 150 2.5 35
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watts mW/°C
°C
Symbol Rejc
Max
28.5
Unit °C/W
MRF313 MRF313A
MRF313 CASE 305A-01, STYLE 1
MRF313A CASE 305-1, STYLE 1
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage (IC = 10 mAdc, Ib = 0)
Collector-Emitter Breakdown
Voltage C(l = 5.0 mAdc, Vbe = 0)
Collector-Base Breakdown
Voltage (lC = 0.1 mAdc, Ie = 0)
Emitter-Base Breakdown
Voltage E(l = 1.0 mAdc, Ic = 0)
Collector Cutoff Current (Vce = 20 Vdc, Ib = 0)
ON CHARACTERISTICS
DC Current Gain (lC = 100 mAdc, Vce = 10 Vdc)
SMALL SIGNAL CHA...
