MRF377R3

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applications in 32 volt digital television transmitter equipment. Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts, IDQO=u2tp.0utAP,o8wKeMr —ode4,56W4 aQttAsMAvg. Power Gain ≥ 16.7 dB Efficiency ≥ 21% ACPR ≤ - 58 dBc Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts, IDQO=u2tp.0utAPower — 80 Watts Avg. Power Gain ≥ 16.5 dB Efficiency ≥ 27.5% IMD ≤ - 31.3 dBc Internally Input and Output Matched for Ease of Use Integrated ESD Protection Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT OFDM Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MRF377 MRF377R3 MRF377R5 470 - 860 MHz, 240 W, 32 V LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 NI - 860C3 Table 1. Maximum Ratings (1) Rating Drain - Source Voltage Gate - Source Voltage Drain Current - Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Stora...