MRF476 Silicon NPN Transistor Final RF Power Output
The MRF476 is a silicon NPN transistor in a TO220 type case designe...
MRF476 Silicon NPN Transistor Final RF Power Output
The MRF476 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter
Voltage (RBE = 150 Ohm), VCER
75V
Collector-Base
Voltage, VCBO
80V
Emitter-Base
Voltage, VEBO
5V
Collector Current, IC
Continuous
3A
Peak
5A
Collector Power Dissipation (TA = +25°C), PD
1.2W
Collector Power Dissipation (TC = +50°C), PD
10W
Operating Junction Temperature, TJ
+150°C
Storage Temperature Range, Tstg
-55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
BCE
Parameter
Symbol
Test Conditions
Collector-Base Breakdown
Voltage V(BR)CBO IC = 100µA, IB = 0
Collector-Emitter Breakdown
Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm
Emitter-Base Breakdown
Voltage V(BR)EBO IE = 100µA, IC = 0
Collector Cutoff Current
ICBO VCB = 40V...
