MRF517 Datasheet





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MRF517 Datasheet - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF517   MRF517  

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 1 8936-1013 PHONE: (215) 631-9840 FAX: (2 15) 631-9855 RF & MICROWAVE DISCRETE LO W POWER TRANSISTORS MRF517 Features Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Band width Product @ 60mA • Broadband Nois e Figure = 7.5 dB @ 50mA, 300 MHz 1. E mitter 2. Base 3. Collector TO-39 DESC RIPTION: The MRF517 is a silicon NPN tr ansistor, designed for VHF and UHF equi pment. Applications include low noise b roadband amplifier; pre-driver, driver, and output stages. ABSOLUTE MAXIMUM R ATINGS (Tcase = 25°C) Symbol Paramet er VCEO Collector-Emitter Voltage VC BO Collector-Base Voltage VEBO Emitter-Bas

Manufacture Part Number Description

ASI

MRF517

NPN SILICON HIGH FREQUENCY TRANSISTOR

Motorola

MRF517

HIGH FREQUENCY TRANSISTOR

Advanced Power Technology

MRF517

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

MRF517

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS




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