MRF553G Datasheet





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MRF553G Datasheet - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF553G   MRF553G  

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 1 8936-1013 PHONE: (215) 631-9840 FAX: (2 15) 631-9855 RF & MICROWAVE DISCRETE LO W POWER TRANSISTORS MRF553 MRF553G * G Denotes RoHS Compliant, Pb Free Termin al Finish Features • Specified @ 12. 5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60% (Typ) • Cost Ef fective PowerMacro Package • Electrol ess Tin Plated Leads for Improved Solde rability Power Macro DESCRIPTION: Des igned primarily for wideband large sign al stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C ) Symbol Parameter VCEO Collector-E mitter Voltage VCBO Collector-Base Vo ltage VEBO Emitter-Base Voltage IC Collector C

Manufacture Part Number Description

Advanced Power Technology

MRF553G

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS




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