MRF559G Datasheet (data sheet) PDF





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MRF559G Datasheet - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF559G   MRF559G  

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RF & MICROWAVE DISCRETE LOW POWER TRANSI STORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Fea tures • Specified @ 12.5 V, 870 MHz C haracteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficienc y 50% • Cost Effective Macro X Packag e • Electroless Tin Plated Leads for Improved Solderability Macro X DESCRI PTION: Designed primarily for wideband l

Manufacture Part Number Description

Advanced Power Technology

MRF559G

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS




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