MRF581 Datasheet (data sheet) PDF





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MRF581 Datasheet - NPN SILICON RF TRANSISTOR

MRF581  

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MRF581 NPN SILICON RF TRANSISTOR DESCR IPTION: The MRF581 is Designed for High current low Power Amplifier Applicatio ns up to 1.0 GHz. PACKAGE STYLE Dim. A re in mm FEATURES: • Low Noise Figur e • Low Intermodulation Distortion High Gain • Omnigold™ Metalizatio n System MAXIMUM RATINGS IC 200 mA V CBO 36 V VCEO 18 V VEBO 2.5 V PDI SS 2.5 W @ TC = 25 °C TJ -65 °C to +

Manufacture Part Number Description

ASI

MRF581

NPN SILICON RF TRANSISTOR

Motorola

MRF581

HIGH FREQUENCY TRANSISTOR

Microsemi

MRF581

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

New Jersey Semiconductor

MRF581

Trans GP BJT NPN 18V 0.2A 4-Pin Macro-X

Advanced Power Technology

MRF581

RF and Microwave Discrete Low Power Power Transistors




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