MRF581A Datasheet





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MRF581A Datasheet - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF581A   MRF581A  

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RF & MICROWAVE DISCRETE LOW POWER TRANSI STORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Term inal Finish Features • Low Noise - 2 .5 dB @ 500 MHZ • Gain at Optimum Noi se Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effectiv e MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. A BSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Em itter Voltage VCBO Collector-Base Vol tage VEBO Emitter-Base Voltage IC Co llector Current MRF581 MRF581A 18 15 3 0 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D P D Tstg Total Device Dissip ation @ TC = 50ºC Derate above 50ºC Total Dev

Manufacture Part Number Description

Microsemi

MRF581A

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

New Jersey Semiconductor

MRF581A

Trans GP BJT NPN 15V 0.2A 4-Pin Macro-X

Advanced Power Technology

MRF581A

RF and Microwave Discrete Low Power Power Transistors




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