MRF5S21090HR3

www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21090H Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — - 37.5 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched, Controlled Q, for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Low Gold Plating Thickness on Leads, 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21090HR3 MRF5S21090HSR3 2170 MHz, 19 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S21090HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S21090HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- So...