MRF629

MRF629 CASE 79-03, STYLE 5 HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tc = 25°C Derate above 25°C Storage Temperature Symbol v CEO VCBO VEBO "c PD Tstg Value 16 36 4.0 400 5.0 50 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 50 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage C(l = 50 mAdc, V B e = 0) Emitter-Base Breakdown Voltage E(l = 1.0 mAdc, Iq = 0) Collector Cutoff Current (VC B = 15 Vdc, El = 0) ON CHARACTERISTICS DC Current Gain (lC = 100 mAdc, Vce = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance (Vcb = 12.5 Vdc, El = 0, f = 1.0 MHz) FUNCTIONAL TEST (FIGURE 1) Common-Emitter Amplifier Power Gain (Vcc = 12.5 Vdc, P ut = 2.0 W, f = 470 MHz) Collector Efficiency (VC ...