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MRF6522-70R3 Transistor Datasheet PDF

RF Power Field Effect Transistor

RF Power Field Effect Transistor

 

 

 

Part Number MRF6522-70R3
Description RF Power Field Effect Transistor
Feature MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order th is document by MRF6522 - 70/D The RF M OSFET Line RF Power Field Effect Trans istor Designed for GSM 900 frequency ba nd, the high gain and broadband perform ance of this device make it ideal for l arge - signal, common source amplifier applications in 26 volt base station eq uipment.

• Specified Performance @ Fu ll GSM Band, 921 - 960 MHz, 26 Volts Ou tput Power, P1dB — 80 Watts (Typ) Pow er Gain @ P1dB — 16 dB (Typ) Efficien cy @ P1dB — 58% (Typ)
• Available i n Tape and Reel.
R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
.
Manufacture Motorola
Datasheet
Download MRF6522-70R3 Datasheet

MRF6522-70R3

 

 

 


 

 

 

Part Number MRF6522-70R3
Description RF Power Field Effect Transistor
Feature MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order th is document by MRF6522 - 70/D The RF M OSFET Line RF Power Field Effect Trans istor Designed for GSM 900 frequency ba nd, the high gain and broadband perform ance of this device make it ideal for l arge - signal, common source amplifier applications in 26 volt base station eq uipment.

• Specified Performance @ Fu ll GSM Band, 921 - 960 MHz, 26 Volts Ou tput Power, P1dB — 80 Watts (Typ) Pow er Gain @ P1dB — 16 dB (Typ) Efficien cy @ P1dB — 58% (Typ)
• Available i n Tape and Reel.
R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
.
Manufacture Motorola
Datasheet
Download MRF6522-70R3 Datasheet

MRF6522-70R3

 

 

 

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