MRF658

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF658/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB Minimum Efficiency = 50% Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz Built–In Matching Network for Broadband Operation Triple Ion Implanted for More Consistent Characteristics Implanted Emitter Ballast Resistors for Improved Ruggedness Silicon Nitride Passivated Capable of Surviving Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive MRF658 65 W, 512 MHz RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Value 16.5 38 4.0 15 175 1.0 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Br...